Winsok Semicon-Single FETs, MOSFETs-WSD2018DN22

Description

Drain to Source Voltage;20V/Gate Charge(Qg);32nC@5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.5W/RDS(on);15mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);450pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;1.8nF


20V 15mΩ@4.5V 1 N-channel 1.5W PDFN-6-EP(2x2) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);32nC@5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.5W/RDS(on);15mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);450pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);32nC@5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.5W/RDS(on);15mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);450pF/Current - Continuous Drain(Id);12A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;1.8nF


    20V 15mΩ@4.5V 1 N-channel 1.5W PDFN-6-EP(2x2) Single FETs, MOSFETs RoHS

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