Wuxi China Resources Huajing Microelectronics-Single FETs, MOSFETs-CS10N50FA9R

Description

Drain to Source Voltage;500V/Gate Charge(Qg);32nC@10V/Number;1 N-channel/Pd - Power Dissipation;40W/RDS(on);500mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));2V


500V 500mΩ@10V 1 N-channel 40W TO-220F Single FETs, MOSFETs RoHS

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Drain to Source Voltage;500V/Gate Charge(Qg);32nC@10V/Number;1 N-channel/Pd - Power Dissipation;40W/RDS(on);500mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));2V500V 500mΩ@10V 1 N-channel... Read more

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    Description

    Drain to Source Voltage;500V/Gate Charge(Qg);32nC@10V/Number;1 N-channel/Pd - Power Dissipation;40W/RDS(on);500mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);10A/Gate Threshold Voltage (Vgs(th));2V


    500V 500mΩ@10V 1 N-channel 40W TO-220F Single FETs, MOSFETs RoHS

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