Wuxi China Resources Huajing Microelectronics-Single FETs, MOSFETs-CS25N06B4

Description

Drain to Source Voltage;60V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;50W/RDS(on);36mΩ@10V/Current - Continuous Drain(Id);25A/Gate Threshold Voltage (Vgs(th));3V


60V 36mΩ@10V 1 N-channel 50W TO-252-2(DPAK) Single FETs, MOSFETs RoHS

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Drain to Source Voltage;60V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;50W/RDS(on);36mΩ@10V/Current - Continuous Drain(Id);25A/Gate Threshold Voltage (Vgs(th));3V60V 36mΩ@10V 1 N-channel 50W TO-252-2(DPAK) Single... Read more

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    Description

    Drain to Source Voltage;60V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;50W/RDS(on);36mΩ@10V/Current - Continuous Drain(Id);25A/Gate Threshold Voltage (Vgs(th));3V


    60V 36mΩ@10V 1 N-channel 50W TO-252-2(DPAK) Single FETs, MOSFETs RoHS

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