Wuxi China Resources Huajing Microelectronics-Single FETs, MOSFETs-CS3N80A3

Description

Drain to Source Voltage;800V/Gate Charge(Qg);18nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;75W/RDS(on);4.8Ω@10V/Reverse Transfer Capacitance (Crss@Vds);7pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;660pF/Output Capacitance(Coss);50pF


N-Channel 800V 3A 75W Through Hole TO-251

Product form

Drain to Source Voltage;800V/Gate Charge(Qg);18nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;75W/RDS(on);4.8Ω@10V/Reverse Transfer Capacitance (Crss@Vds);7pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;660pF/Output Capacitance(Coss);50pFN-Channel... Read more

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    Description

    Drain to Source Voltage;800V/Gate Charge(Qg);18nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;75W/RDS(on);4.8Ω@10V/Reverse Transfer Capacitance (Crss@Vds);7pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;660pF/Output Capacitance(Coss);50pF


    N-Channel 800V 3A 75W Through Hole TO-251

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