Wuxi China Resources Huajing Microelectronics-Single FETs, MOSFETs-CS4N60A3R

Description

Drain to Source Voltage;600V/Gate Charge(Qg);14.5nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;75W/RDS(on);2.5Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));4V


N-Channel 600V 4A 75W Through Hole TO-251

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);14.5nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;75W/RDS(on);2.5Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));4VN-Channel 600V 4A 75W... Read more

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);14.5nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;75W/RDS(on);2.5Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4A/Gate Threshold Voltage (Vgs(th));4V


    N-Channel 600V 4A 75W Through Hole TO-251

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