Wuxi China Resources Huajing Microelectronics-Single FETs, MOSFETs-CS6N80ARR-G

Description

Drain to Source Voltage;800V/Gate Charge(Qg);28.4nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;180W/RDS(on);2.2Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4.7pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.556nF/Output Capacitance(Coss);115pF


N-Channel 800V 6A 180W Through Hole TO-262-3

Product form

Drain to Source Voltage;800V/Gate Charge(Qg);28.4nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;180W/RDS(on);2.2Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4.7pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;800V/Gate Charge(Qg);28.4nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;180W/RDS(on);2.2Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);4.7pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.556nF/Output Capacitance(Coss);115pF


    N-Channel 800V 6A 180W Through Hole TO-262-3

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