Wuxi China Resources Huajing Microelectronics-Single FETs, MOSFETs-CS730A3RD

Description

Drain to Source Voltage;400V/Gate Charge(Qg);14.5nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;75W/RDS(on);1Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7.5pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;540pF


400V 1Ω@10V 1 N-channel 75W TO-251 Single FETs, MOSFETs RoHS

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Drain to Source Voltage;400V/Gate Charge(Qg);14.5nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;75W/RDS(on);1Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7.5pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;400V/Gate Charge(Qg);14.5nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;75W/RDS(on);1Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7.5pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;540pF


    400V 1Ω@10V 1 N-channel 75W TO-251 Single FETs, MOSFETs RoHS

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