Wuxi China Resources Huajing Microelectronics-Single FETs, MOSFETs-CS8N60FA9H

Description

Drain to Source Voltage;600V/Gate Charge(Qg);29nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;45W/RDS(on);1.2Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.253nF/Output Capacitance(Coss);115pF


N-Channel 600V 8A 45W Through Hole TO-220F

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);29nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;45W/RDS(on);1.2Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);29nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;45W/RDS(on);1.2Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.253nF/Output Capacitance(Coss);115pF


    N-Channel 600V 8A 45W Through Hole TO-220F

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