Wuxi China Resources Huajing Microelectronics-Single FETs, MOSFETs-CS8N65FA9H

Description

Drain to Source Voltage;650V/Gate Charge(Qg);28nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;45W/RDS(on);1.3Ω@10V/Reverse Transfer Capacitance (Crss@Vds);14pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.24nF/Output Capacitance(Coss);108pF


650V 1.3Ω@10V 1 N-channel 45W TO-220F-3 Single FETs, MOSFETs RoHS

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Drain to Source Voltage;650V/Gate Charge(Qg);28nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;45W/RDS(on);1.3Ω@10V/Reverse Transfer Capacitance (Crss@Vds);14pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.24nF/Output Capacitance(Coss);108pF650V... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);28nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;45W/RDS(on);1.3Ω@10V/Reverse Transfer Capacitance (Crss@Vds);14pF/Current - Continuous Drain(Id);8A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.24nF/Output Capacitance(Coss);108pF


    650V 1.3Ω@10V 1 N-channel 45W TO-220F-3 Single FETs, MOSFETs RoHS

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