WUXI UNIGROUP MICRO-Single FETs, MOSFETs-TPA60R330M

Description

Drain to Source Voltage;600V/Gate Charge(Qg);19nC@10V/Number;1 N-channel/Pd - Power Dissipation;31W/RDS(on);290mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);6pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.021nF/Output Capacitance(Coss);43pF


N-Channel 600V 11A 31W Through Hole TO-220F

Product form

Drain to Source Voltage;600V/Gate Charge(Qg);19nC@10V/Number;1 N-channel/Pd - Power Dissipation;31W/RDS(on);290mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);6pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;600V/Gate Charge(Qg);19nC@10V/Number;1 N-channel/Pd - Power Dissipation;31W/RDS(on);290mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);6pF/Current - Continuous Drain(Id);11A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.021nF/Output Capacitance(Coss);43pF


    N-Channel 600V 11A 31W Through Hole TO-220F

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