WUXI UNIGROUP MICRO-Single FETs, MOSFETs-TPA65R360M

Description

Drain to Source Voltage;650V/Gate Charge(Qg);22nC@10V/Number;1 N-channel/Pd - Power Dissipation;83W/RDS(on);310mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);6.6A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;871pF


N-Channel 650V 6.6A 83W Through Hole TO-220F-3

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);22nC@10V/Number;1 N-channel/Pd - Power Dissipation;83W/RDS(on);310mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);6.6A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);22nC@10V/Number;1 N-channel/Pd - Power Dissipation;83W/RDS(on);310mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);6.6A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;871pF


    N-Channel 650V 6.6A 83W Through Hole TO-220F-3

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