WUXI UNIGROUP MICRO-Single FETs, MOSFETs-TPD65R950M

Description

Drain to Source Voltage;650V/Gate Charge(Qg);9.6nC@10V/Number;1 N-channel/Pd - Power Dissipation;37W/RDS(on);870mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2.1pF/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;320pF


N-Channel 650V 4.5A 37W Surface Mount TO-252

Product form

Drain to Source Voltage;650V/Gate Charge(Qg);9.6nC@10V/Number;1 N-channel/Pd - Power Dissipation;37W/RDS(on);870mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2.1pF/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;650V/Gate Charge(Qg);9.6nC@10V/Number;1 N-channel/Pd - Power Dissipation;37W/RDS(on);870mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);2.1pF/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;320pF


    N-Channel 650V 4.5A 37W Surface Mount TO-252

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