WUXI UNIGROUP MICRO-Single FETs, MOSFETs-TPW65R135MFD

Description

Drain to Source Voltage;700V/Gate Charge(Qg);57nC@10V/Number;1 N-channel/Pd - Power Dissipation;219W/RDS(on);135mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;2.48nF/Output Capacitance(Coss);83pF


N-Channel 700V 30A 219W Through Hole TO-247-3

Product form

Drain to Source Voltage;700V/Gate Charge(Qg);57nC@10V/Number;1 N-channel/Pd - Power Dissipation;219W/RDS(on);135mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;700V/Gate Charge(Qg);57nC@10V/Number;1 N-channel/Pd - Power Dissipation;219W/RDS(on);135mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;2.48nF/Output Capacitance(Coss);83pF


    N-Channel 700V 30A 219W Through Hole TO-247-3

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