WUXI UNIGROUP MICRO-Single FETs, MOSFETs-TTD30P03AT

Description

Drain to Source Voltage;30V/Gate Charge(Qg);41nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;60W/RDS(on);17mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);216pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;2.087nF


P-Channel 30V 30A 60W Surface Mount TO-252

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);41nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;60W/RDS(on);17mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);216pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);41nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;60W/RDS(on);17mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);216pF/Current - Continuous Drain(Id);30A/Gate Threshold Voltage (Vgs(th));1.7V/Ciss-Input Capacitance;2.087nF


    P-Channel 30V 30A 60W Surface Mount TO-252

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